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A 0.038-mm2SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop
Gengzhen Qi; Pui-In Mak; Rui P. Martins
2017-08
Source PublicationIEEE Journal of Solid-State Circuits
ISSN0018-9200
Volume52Issue:8Pages:2055 - 2070
Abstract

An N-path switched-capacitor (SC) gain loop is proposed as an area-efficient surface acoustic wave-less wireless transceiver (TXR) for multiband TDD communications. Unlike the direct-conversion transmitter (TX: baseband (BB) filter → I/Q modulation → PA driver) and receiver (RX: LNA → I/Q demodulation → BB Filter) that the functions are arranged in an open-loop style, here the signal amplification, bandpass filtering, and I/Q (de)modulation are unified in a closed-loop formation, being reconfigurable as a TX or RX with a local oscillator (LO)defined center frequency. The key advantages are the multiband operation capability in the TX mode, and high resilience to outof-band (OB) blockers in the RX mode. Fabricated in a 65-nm CMOS, the TXR prototype consumes up to 38.4 mW (20 mW) in the TX (RX) mode at the 1.88-GHz long-term evolution (LTE)band2. The LO-defined center frequency covers 80% of the TDD-LTE bands with neither on-chip inductors nor external input-matching components. By properly injecting (extracting) the signals into (from) the N-path SC gain loop, the TX mode achieves an -1 dBm output power, a -40 dBc ACLREUTRA1, and a 2% EVM at 1.88 GHz, while showing a -154.5 dBc/Hz OB noise at 80-MHz offset. In the RX mode, a 3.2-dB noise figure and a +8 dBm OB-IIP3 are measured. The active area (0.038 mm 2 ) of the TXR is 24× smaller than the state-of-the-art LTE solutions.

KeywordAdjacent-channel Leakage Rejection (Aclr) Long-term Evolution (Lte) Miller Effect Multiband n Path Noise Figure (Nf) Out Of Band (Ob) Passive Mixer Phase Noise Power-amplifier Driver (Pad) Receiver (Rx) Surface Acoustic Wave (Saw) Switched Capacitor (Sc) Transceiver (Txr) Transmitter (Tx) Bandpass Filter Baseband (Bb) Blocker Cmos
DOIhttp://doi.org/10.1109/JSSC.2017.2697409
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000406280600005
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Citation statistics
Cited Times [WOS]:4   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionFaculty of Science and Technology
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
AffiliationState-Key Laboratory of Analog and Mixed-Signal VLSI and FST-ECE, University of Macau, Macau, China
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Gengzhen Qi,Pui-In Mak,Rui P. Martins. A 0.038-mm2SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop[J]. IEEE Journal of Solid-State Circuits,2017,52(8):2055 - 2070.
APA Gengzhen Qi,Pui-In Mak,&Rui P. Martins.(2017).A 0.038-mm2SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop.IEEE Journal of Solid-State Circuits,52(8),2055 - 2070.
MLA Gengzhen Qi,et al."A 0.038-mm2SAW-Less Multiband Transceiver Using an N-Path SC Gain Loop".IEEE Journal of Solid-State Circuits 52.8(2017):2055 - 2070.
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