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A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS
Haidong Yi; Wei-Han Yu; Pui-In Mak; Jun Yin; Rui P. Martins
2018-06
Source PublicationIEEE Journal of Solid-State Circuits
ISSN0018-9200
Volume53Issue:6Pages:1618 - 1627
Abstract

This paper describes an ultra-low-voltage Bluetooth low-energy (BLE) receiver (RX) front end with an on-chip micropower manager (µPM) to customize the internal voltage domains. It aims at direct powering by the sub-0.5-V energyharvesting sources like the on-body thermoelectric, eliminating the loss and cost of the interim dc–dc converters. Specifically, the RX incorporates: 1) a two-stage power-gating low-noise amplifier with fully on-chip input-impedance matching and passive gain boosting reducing both the active and sleep power; 2) a class-D voltage-controlled oscillator (VCO) in parallel with a class-C starter to secure a fast startup; and 3) a µPM using ringVCO-locked charge pumps and bandgap references to withstand the supply-voltage variation (0.18–0.3 V). Fabricated in 28-nm CMOS, the RX operates down to a 0.18-V supply, while exhibiting 11.3-dB NF and −12.5-dBm out-of-band IIP3. The VCO shows < −113 dBc/Hz phase noise at 2.5-MHz offset. The active and sleep power are 382 µW and 1.33 nW, respectively

KeywordBandgap Reference (Bgr) Bluetooth Low Energy (Ble) Charge Pump (Cp) Class-d Voltage-controlled Oscillator (Vco) Cmos Energy Harvesting Low-noise Amplifier (Lna) Micropower Manager (Μpm) Power-gating Receiver (Rx) Ultra-low Power (Ulp) Ultra-low Voltage (Ulv)
DOIhttp://doi.org/10.1109/JSSC.2018.2815987
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000433336200005
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Citation statistics
Cited Times [WOS]:6   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionFaculty of Science and Technology
INSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorPui-In Mak; Rui P. Martins
AffiliationDepartment of Electrical and Computer Engineering, State-Key Laboratory of Analog and Mixed-Signal VLSI and the Faculty of Science and Technology, University of Macau, Macau, China
First Author AffilicationFaculty of Science and Technology
Corresponding Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Haidong Yi,Wei-Han Yu,Pui-In Mak,et al. A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS[J]. IEEE Journal of Solid-State Circuits,2018,53(6):1618 - 1627.
APA Haidong Yi,Wei-Han Yu,Pui-In Mak,Jun Yin,&Rui P. Martins.(2018).A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS.IEEE Journal of Solid-State Circuits,53(6),1618 - 1627.
MLA Haidong Yi,et al."A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS".IEEE Journal of Solid-State Circuits 53.6(2018):1618 - 1627.
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