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A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C
Wang B.1; Law M.K.2; Tang F.1; Bermak A.1
2012-09-28
Conference NameIEEE International Symposium on Circuits and Systems
Source PublicationISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
Pages3114-3117
Conference DateMAY 20-23, 2012
Conference PlaceSeoul, SOUTH KOREA
Abstract

In this paper, a smart temperature sensor working at a supply voltage as low as 0.9V over the full military temperature range is presented. Low voltage operation is achieved by biasing the front-end BJT pairs with different emitter currents for two different sensing ranges, from 55°C to 30°C and from 20°C to 125°C, respectively. A second-order inverter-based ΣΔADC with dynamic element matching (DEM) and input signal chopping to control the conversion error to within 0:2°C is used for digital readout. Front-end bias currents are selected during the design stage to minimize the induced sensing error. The proposed sensor is implemented using the TSMC 0.18μm 1P6M process. Simulation result shows that a +1°C=0:1°C sensing error using one-point calibration can be achieved from 55°C to 125°C. At a sampling speed of 20 samples/s, the sensor consumes 3.4μA and 4.7μA in the low temperature range and the high temperature range, respectively. © 2012 IEEE.

DOI10.1109/ISCAS.2012.6271980
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000316903703078
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Citation statistics
Document TypeConference paper
CollectionINSTITUTE OF MICROELECTRONICS
Affiliation1.Hong Kong University of Science and Technology
2.Universidade de Macau
Recommended Citation
GB/T 7714
Wang B.,Law M.K.,Tang F.,et al. A sub-1V BJT-based CMOS temperature sensor from 55°C to 125°C[C],2012:3114-3117.
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