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A precision CMOS voltage reference exploiting silicon bandgap narrowing effect
Wang B.1; Law M.K.2; Bermak A.1
2015-07-01
Source PublicationIEEE Transactions on Electron Devices
ISSN00189383
Volume62Issue:7Pages:2128-2135
Abstract

A compact voltage-mode bandgap voltage reference (BGR) is presented. Instead of using overhead circuits, the silicon bandgap narrowing effect is exploited for bipolar junction transistor's (BJT) curvature reduction and residual curvature correction. Prototype measurements in a 0.18-μm standard CMOS process show that the curvature of the BJT is effectively reduced from its inherent 3.6 mV to 1.4 mV. The proposed BGR measures a minimum temperature coefficient of 8.7 ppm/°C from -55 °C to 125 °C by batch trimming one resistor. After a curvature trimming, it further improves to 4.1 ppm/°C. The BGR has a minimum supply voltage of 1.3 V, 4.3 μA nominal current consumption, 0.03%/V line sensitivity, and 2 mV/mA load sensitivity at 25 °. The output rms noise in the 0.1 ∼ 10-Hz band measures 10.23 μV.

KeywordBandgap Narrowing (Bgn) Bipolar Junction Transistor (Bjt) Curvature Reduction Bjt Noise Cmos Bandgap Voltage Reference (Bgr) Curvature Correction Process Spread Temperature Coefficient (Tc)
DOI10.1109/TED.2015.2434495
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Physics, Applied
WOS IDWOS:000356457900009
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Citation statistics
Cited Times [WOS]:10   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorWang B.; Law M.K.; Bermak A.
Affiliation1.Hong Kong University of Science and Technology
2.Universidade de Macau
Recommended Citation
GB/T 7714
Wang B.,Law M.K.,Bermak A.. A precision CMOS voltage reference exploiting silicon bandgap narrowing effect[J]. IEEE Transactions on Electron Devices,2015,62(7):2128-2135.
APA Wang B.,Law M.K.,&Bermak A..(2015).A precision CMOS voltage reference exploiting silicon bandgap narrowing effect.IEEE Transactions on Electron Devices,62(7),2128-2135.
MLA Wang B.,et al."A precision CMOS voltage reference exploiting silicon bandgap narrowing effect".IEEE Transactions on Electron Devices 62.7(2015):2128-2135.
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