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A high-voltage-enabled recycling folded cascode OpAmp for nanoscale CMOS technologies
Liu M.2; Mak P.-I.2; Yan Z.2; Martins R.P.1,2
2011-08-02
Conference NameIEEE International Symposium on Circuits and Systems (ISCAS)
Source PublicationProceedings - IEEE International Symposium on Circuits and Systems
Pages33-36
Conference DateMAY 15-18, 2011
Conference PlaceRio de Janeiro, BRAZIL
Abstract

This paper describes a high-voltage-enabling circuit technique for enhancing the gain precision and linearity of OpAmp-based analog circuits. Without resorting from specialized devices, a 2xV-enabled recycling folded cascode (RFC) OpAmp optimized in 1V GP 65-nm CMOS achieves, when compared with its 1xV counterpart, 25-dB higher open-loop DC gain and 30-dB higher IM3 (in closed loop), under a similar power budget. These joint improvements save the need of a 2 stage in the OpAmp when high precision and high linearity are the priorities. A voltage-conscious bias scheme and gate-drain-source engineering ensure that all devices are consistently operated within the reliability limits. © 2011 IEEE.

DOIhttp://doi.org/10.1109/ISCAS.2011.5937494
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000297265300007
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被引频次[WOS]:6   [WOS记录]     [WOS相关记录]
Document TypeConference paper
专题DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Affiliation1.Instituto Superior Técnico
2.Universidade de Macau
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Liu M.,Mak P.-I.,Yan Z.,et al. A high-voltage-enabled recycling folded cascode OpAmp for nanoscale CMOS technologies[C],2011:33-36.
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