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A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power
U. R. Jagadheswaran1; Harikrishnan Ramiah2; Pui-In Mak3; Rui P. Martins4
2016
Source PublicationIEEE Transactions on Microwave Theory and Techniques
ISSN00189480
Volume64Issue:1Pages:200-209
Abstract

This paper describes the first linear multistage class-J power amplifier (PA) fabricated in a 2-μ InGaP/GaAs HBT process for multi-band long-term evolution (LTE) applications. It includes a three-stage topology composed by a pre-driver, driver, and a class-J main stage, to optimize the output power and power-added efficiency (PAE) over 1.7-2.05 GHz, thus encapsulating the LTE bands 1 to 4, 9 to 10, 33 to 37, and 39. This is achieved through a novel analog pre-distorter linearizer, which features two sub-circuits for AM-AM and AM-PM linearization. The PA prototype meets the standard's adjacent channel leakage ratio(ACLR<-30) dBc at a maximum linear output power of 28 dBm. Tested at 2.05 GHz and for a 16-QAM scheme, the maximum error vector magnitude is 3.38% at a 28-dBm output power, which corresponds to a PAE of 40.5%-55.8% across bands. The input return loss is < -15 dB and the maximum power gain is 35.8 dB, while demonstrating an unconditional stable characteristic from dc up to 5 GHz. The die area is 950μ × 900μ. The performance metrics compare favorably with the state-of-the-art.

KeywordAdjacent Channel Leakage Ratio (Aclr) Error Vector Magnitude (Evm) Gallium-arsenide (Gaas) Long-term Evolution (Lte) Power Amplifier (Pa) Power-added Efficiency (Pae) Quadrature Amplitude Modulation (Qam)
DOIhttp://doi.org/10.1109/TMTT.2015.2498150
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000372486200020
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Cited Times [WOS]:11   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Silterra Sdn Bhd, 09000 Kulim Kedah Darul Aman, Malaysia
2.Faculty of Engineering, Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia
3.State-Key Laboratory of Analog and Mixed-Signal VLSI and Faculty of Science and Technology–Electrical and Computer Engineering (ECE), State-Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macao, China
4.State-Key Laboratory of Analog and Mixed-Signal VLSI and Faculty of Science and Technology–Electrical and Computer Engineering (ECE), State-Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macao, China, and als
Recommended Citation
GB/T 7714
U. R. Jagadheswaran,Harikrishnan Ramiah,Pui-In Mak,et al. A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power[J]. IEEE Transactions on Microwave Theory and Techniques,2016,64(1):200-209.
APA U. R. Jagadheswaran,Harikrishnan Ramiah,Pui-In Mak,&Rui P. Martins.(2016).A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power.IEEE Transactions on Microwave Theory and Techniques,64(1),200-209.
MLA U. R. Jagadheswaran,et al."A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power".IEEE Transactions on Microwave Theory and Techniques 64.1(2016):200-209.
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