UM  > 微電子研究院
A 312 ps response-time LDO with enhanced super source follower in 28 nm CMOS
Yan Lu1; Cheng Li1; Yan Zhu1; Mo Huang1; Seng-Pan U1; Rui P. Martins1
2016-08-04
Source PublicationElectronics Letters
ISSN00135194
Volume52Issue:16Pages:1368-1370
Abstract

High quality fully integrated power supplies could notably improve the performances of the noise-sensitive building block in the UWB communication systems. Double buffers are inserted into the cascode flipped-voltage-follower (FVF) topology to enable designing the dominant pole at the output node for better power supply rejection (PSR) and less voltage variation during load transient. An enhanced super source follower (E-SSF) is proposed to further reduce the output impedance of the buffer that drives the power transistor. The FVF-based low dropout regulator (LDO) with E-SSF achieves a worst-case PSR of -18.9 dB across the full spectrum and a transient response time of 312 ps. The proposed LDO is designed in a 28 nm CMOS process and consumes 100 μA quiescent current with 1.0 V input and 0.8 V output voltages. In total, 120 pF on-chip capacitors are used for filtering.

DOI10.1049/el.2016.1719
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000381378900007
Fulltext Access
Citation statistics
Cited Times [WOS]:14   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Corresponding AuthorYan Lu
Affiliation1.Universidade de Macau
2.Instituto Superior Técnico
Recommended Citation
GB/T 7714
Yan Lu,Cheng Li,Yan Zhu,et al. A 312 ps response-time LDO with enhanced super source follower in 28 nm CMOS[J]. Electronics Letters,2016,52(16):1368-1370.
APA Yan Lu,Cheng Li,Yan Zhu,Mo Huang,Seng-Pan U,&Rui P. Martins.(2016).A 312 ps response-time LDO with enhanced super source follower in 28 nm CMOS.Electronics Letters,52(16),1368-1370.
MLA Yan Lu,et al."A 312 ps response-time LDO with enhanced super source follower in 28 nm CMOS".Electronics Letters 52.16(2016):1368-1370.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yan Lu]'s Articles
[Cheng Li]'s Articles
[Yan Zhu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yan Lu]'s Articles
[Cheng Li]'s Articles
[Yan Zhu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yan Lu]'s Articles
[Cheng Li]'s Articles
[Yan Zhu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.