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An area-efficient and tunable Bandwidth-Extension Technique for a Wideband CMOS Amplifier Handling 50+ Gb/s Signaling
Chen Y.3; Mak P.-I.1; Yu H.1; Boon C.C.3; Martins R.P.1
2017
Source PublicationIEEE Transactions on Microwave Theory and Techniques
ISSN00189480
Volume65Issue:12Pages:4960-4975
Abstract

This paper reports an area-efficient and tunable bandwidth (BW)-extension technique for a wideband CMOS amplifier to handle very high rate (50+ Gb/s) signaling while keeping a low jitter penalty. We identify its architectural advantages by correlating the performances with the frequency domain (magnitude and group delay (GD) responses) and time domain (impulse and step responses) and comparing them with the existing solutions. Specifically, our technique enables a flexible ac characteristic by introducing a tunable grounded active inductor in the bridged-shunt peaking topology, offering: 1) a high BW enhancement ratio (BWER = 2.65× 2) BW-power scalability with small in-band gain variation; and 3) fine tunability of the passband gain without affecting the BW, GD, and power. The experimental prototype is a 65-nm CMOS four-stage differential amplifier occupying just 0.0077 mm. It delivers a 15-dB gain over a 43-GHz BW with 45-mW power consumption. Small in-band gain variation (0.58 dB) and ripple (1.53 dB) are concurrently achieved with low in-band GD variation (17 to 35.3 ps) and ripple (18.3 ps). The achieved figure of merit of 5.48 [(dc Gain × BW)/Power] compares favorably with the prior art.

KeywordAc charActeristic Bandwidth (Bw) Bridged-shunt Peaking Cmos Data-dependent Jitter (Ddj) Figure Of Merit (Fom) Grounded Active Inductor (Gai) Group Delay Ripple (Gdr) Intersymbol Interference (Isi) Shunt Peaking T-coil Wideband Amplifier
DOIhttp://doi.org/10.1109/TMTT.2017.2720600
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000418391300020
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Citation statistics
Cited Times [WOS]:7   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorChen Y.; Mak P.-I.; Martins R.P.
Affiliation1.Universidade de Macau
2.Instituto Superior Técnico
3.Nanyang Technological University
Recommended Citation
GB/T 7714
Chen Y.,Mak P.-I.,Yu H.,et al. An area-efficient and tunable Bandwidth-Extension Technique for a Wideband CMOS Amplifier Handling 50+ Gb/s Signaling[J]. IEEE Transactions on Microwave Theory and Techniques,2017,65(12):4960-4975.
APA Chen Y.,Mak P.-I.,Yu H.,Boon C.C.,&Martins R.P..(2017).An area-efficient and tunable Bandwidth-Extension Technique for a Wideband CMOS Amplifier Handling 50+ Gb/s Signaling.IEEE Transactions on Microwave Theory and Techniques,65(12),4960-4975.
MLA Chen Y.,et al."An area-efficient and tunable Bandwidth-Extension Technique for a Wideband CMOS Amplifier Handling 50+ Gb/s Signaling".IEEE Transactions on Microwave Theory and Techniques 65.12(2017):4960-4975.
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