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Piecewise BJT process spread compensation exploiting base recombination current
Dapeng Sun1; Man-Kay Law1; Bo Wang2; Pui-In Mak1; Rui P. Martins1,3
2017-09-25
Conference NameIEEE International Symposium on Circuits and Systems (ISCAS)
Source Publication2017 IEEE International Symposium on Circuits and Systems (ISCAS)
Pages890-893
Conference Date28-31 May 2017
Conference PlaceBaltimore, MD, USA
Abstract

In this paper, a piecewise bipolar junction transistor (BJT) process spread compensation scheme is presented. By exploiting the strong correlation between the BJT saturation current and the piecewise base recombination current, the process spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) can be reduced over a wide temperature range. Fabricated in standard 0.18-μm CMOS, the chip prototype achieves a measured Vbe standard deviation (STD) of 1.1 mV (1.8 mV) from -30 to 60 °C (-30 to 120 °C) over 12 samples, corresponding to a 2.9X (1.8X) improvement when compared to the measured Vbe STD of 3.24 mV at 25 °C from 15 standalone BJT samples with constant external bias current using the same process.

KeywordBipolar Junction Transistor (Bjt) Piecewise Process Spread Compensation Base Recombination Current
DOIhttp://doi.org/10.1109/ISCAS.2017.8050475
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000424890100229
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Citation statistics
Document TypeConference paper
CollectionINSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Affiliation1.State-Key Laboratory of Analog and Mixed-Signal VLSI and FST-ECE, University of Macau, Macau, China
2.College of Science and Engineering, Hamad Bin Khalifa University, Doha, Qatar
3.on leave from Instituto Superior Técnico, Universidade de Lisboa, Portugal
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Dapeng Sun,Man-Kay Law,Bo Wang,et al. Piecewise BJT process spread compensation exploiting base recombination current[C],2017:890-893.
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