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Nano-Watt Class Energy-Efficient Capacitive Sensor Interface with On-Chip Temperature Drift Compensation
Zhang T.-T.2; Law M.-K.2; Mak P.-I.2; Vai M.-I.2; Martins R.P.2
2018-04-01
Source PublicationIEEE Sensors Journal
ISSN1530437X
Volume18Issue:7Pages:2870-2882
Abstract

This paper presents a nano-watt class energy-efficient capacitive sensor interface with on-chip temperature compensation. To achieve both high resolution and sensing accuracies, we exploit the fundamental limits of a two-step incremental-ADC and present a systematic study on the optimal coarse/fine bit allocations in the presence of mismatch errors. Efficient hardware reuse is ensured by utilizing the same loop filter, capacitive DAC, and digital controller in coarse/fine conversions for both capacitance and temperature readouts. A reconfigurable pre-gain stage for both capacitance and temperature sensing and a block-based data weighted averaging scheme are also employed to improve the overall system efficiency with 60% control overhead reduction. Optimized biasing circuit and subthreshold-biased amplifier with indirect compensation are utilized to achieve high accuracy with nano-watt power. Fabricated in a standard 0.18- μm CMOS process, the chip prototype consumes only 570 nW and achieves measured capacitance and temperature sensing inaccuracies of ±0.17 fF ( 1σ ) from 0 to 10.8 pF and ±0.18 °C (3σ ) from 0 to 100 °C, respectively. System level verification with a commercial MEMS pressure sensor shows a measured pressure sensing error improvement of > 150× after temperature compensation.

KeywordCapacitive Sensor Interface Energy Efficiency High Accuracy Mismatch Errors Pressure Sensor Temperature Compensation Two-step Incremental-adc Ultra-low Power
DOI10.1109/JSEN.2018.2803203
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Instruments & Instrumentation ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Instruments & Instrumentation ; Physics, Applied
WOS IDWOS:000427466100032
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Citation statistics
Cited Times [WOS]:1   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorZhang T.-T.; Law M.-K.; Mak P.-I.; Vai M.-I.; Martins R.P.
Affiliation1.Instituto Superior Técnico
2.Universidade de Macau
Recommended Citation
GB/T 7714
Zhang T.-T.,Law M.-K.,Mak P.-I.,et al. Nano-Watt Class Energy-Efficient Capacitive Sensor Interface with On-Chip Temperature Drift Compensation[J]. IEEE Sensors Journal,2018,18(7):2870-2882.
APA Zhang T.-T.,Law M.-K.,Mak P.-I.,Vai M.-I.,&Martins R.P..(2018).Nano-Watt Class Energy-Efficient Capacitive Sensor Interface with On-Chip Temperature Drift Compensation.IEEE Sensors Journal,18(7),2870-2882.
MLA Zhang T.-T.,et al."Nano-Watt Class Energy-Efficient Capacitive Sensor Interface with On-Chip Temperature Drift Compensation".IEEE Sensors Journal 18.7(2018):2870-2882.
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