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A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS
Yi H.2; Yu W.-H.2; Mak P.-I.2; Yin J.2; Martins R.P.1
2018-06-01
Source PublicationIEEE Journal of Solid-State Circuits
ISSN00189200
Volume53Issue:6Pages:1618-1627
AbstractThis paper describes an ultra-low-voltage Bluetooth low-energy (BLE) receiver (RX) front end with an on-chip micropower manager (μPM) to customize the internal voltage domains. It aims at direct powering by the sub-0.5-V energy-harvesting sources like the on-body thermoelectric, eliminating the loss and cost of the interim dc-dc converters. Specifically, the RX incorporates: 1) a two-stage power-gating low-noise amplifier with fully on-chip input-impedance matching and passive gain boosting reducing both the active and sleep power; 2) a class-D voltage-controlled oscillator (VCO) in parallel with a class-C starter to secure a fast startup; and 3) a μ PM using ring-VCO-locked charge pumps and bandgap references to withstand the supply-voltage variation (0.18-0.3 V). Fabricated in 28-nm CMOS, the RX operates down to a 0.18-V supply, while exhibiting 11.3-dB NF and -12.5-dBm out-of-band IIP3. The VCO shows < -113 dBc/Hz phase noise at 2.5-MHz offset. The active and sleep power are 382 μW and 1.33 nW, respectively.
KeywordBandgap reference (BGR) Bluetooth low energy (BLE) charge pump (CP) class-D voltage-controlled oscillator (VCO) CMOS energy harvesting low-noise amplifier (LNA) micropower manager (μPM) power-gating receiver (RX) ultra-low power (ULP) ultra-low voltage (ULV)
DOI10.1109/JSSC.2018.2815987
URLView the original
Language英語
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Cited Times [WOS]:8   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF MICROELECTRONICS
Affiliation1.Universidade de Lisboa
2.Universidade de Macau
Recommended Citation
GB/T 7714
Yi H.,Yu W.-H.,Mak P.-I.,et al. A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits,2018,53(6):1618-1627.
APA Yi H.,Yu W.-H.,Mak P.-I.,Yin J.,&Martins R.P..(2018).A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS.IEEE Journal of Solid-State Circuits,53(6),1618-1627.
MLA Yi H.,et al."A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS".IEEE Journal of Solid-State Circuits 53.6(2018):1618-1627.
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