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|Title:||A 0.07mm2, 2mW, 75MHz-IF, 4th-order BPF using a source-follower-based resonator in 90nm CMOS|
|Authors:||Mak, Pui In (麥沛然)|
|Citation:||Electronics letters, May 2012, v. 48, no. 10, p. 552-554|
|Abstract:||A highly-transistorised bandpass filter (BPF) using a source-follower-based (SFB) resonator is proposed. It benefits from the advantageous properties of the source follower (e.g. no parasitic pole, linear VGS I/O relationship, high-input and low-output impedances), while combining it with a compact and low-power grounded differential active inductor to synthesise the complex poles. Fabricated in 90 nm CMOS, a fourth-order 75 MHz-IF BPF prototype merging two such SFB resonators measures a 10 MHz bandwidth at 2 mW of power. The die size is merely 0.07 mm2.|
|Keywords:||CMOS integrated circuits|
|Appears in Collections:||ECE Journal Articles|
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