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Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy
Sun, Dapeng1,2; Zhang, Tan-Tan1,2; Law, Man-Kay1; Mak, Pui-In1,2; Martins, Rui Paulo1,2,3
2018-11
Source PublicationELECTRONICS LETTERS
ISSN0013-5194
Volume54Issue:22Pages:1270-1271
AbstractA bipolar junction transistor (BJT)-based CMOS temperature sensor exploiting the piecewise BJT process spread compensation property of the base recombination current is proposed to reduce the process variations of the base-emitter voltage (V-be). The weighted combinations of different on-chip resistors are explored to minimise their associated process spread. Fabricated in standard 0.18-m CMOS, the chip prototype occupies an active area of 0.036 mm(2) and draws 3 A from a 1.2 V supply, with a measured maximum inter-/intra-die variation in V-be of <1.5 mV from -40 to 125 degrees C from two batches. Using the measured V-be, V-be and the first-batch-only calibration parameters, the chip prototype demonstrates an untrimmed batch-to-batch inaccuracy of +/- 1.5 degrees C (3 sigma) within the same temperature range (24 samples from 2 batches).
Keywordresistors calibration CMOS integrated circuits bipolar transistors temperature sensors first-batch-only calibration parameters batch-to-batch inaccuracy piecewise BJT process compensation property base recombination current base-emitter voltage CMOS temperature sensor process compensated BJT intra-die variation spread compensation property on-chip resistors inter-die variation current 3 0 muA voltage 1 2 V temperature-40 degC to 125 degC size 0 036 mm
DOI10.1049/el.2018.6447
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000448327900012
PublisherINST ENGINEERING TECHNOLOGY-IET
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Affiliation1.Univ Macau, VLSI, State Key Lab Analog & Mixed Signal, Macau 999078, Peoples R China;
2.Univ Macau, Fac Sci & Technol Elect & Comp Engn, Macau 999078, Peoples R China;
3.Univ Lisbon, Inst Super Tecn, Lisbon, Portugal
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Sun, Dapeng,Zhang, Tan-Tan,Law, Man-Kay,et al. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS,2018,54(22):1270-1271.
APA Sun, Dapeng,Zhang, Tan-Tan,Law, Man-Kay,Mak, Pui-In,&Martins, Rui Paulo.(2018).Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy.ELECTRONICS LETTERS,54(22),1270-1271.
MLA Sun, Dapeng,et al."Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy".ELECTRONICS LETTERS 54.22(2018):1270-1271.
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