UM
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric
Jiang, Huaxing1; Liu, Chao1; Ng, Kar Wei2; Tang, Chak Wah1; Lau, Kei May1
2018-12
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN0018-9383
Volume65Issue:12Pages:5337-5342
AbstractWe report on the power performance of GaN-on-Si metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with a high-k ZrO2 gate dielectric formed by atomic layer deposition. As a result of the high-quality ZrO2 and ZrO2/AlGaN interface, the MOSHEMTs demonstrate an excellent ON/OFF current ratio of 5 x 10(10), a steep subthreshold slope of 66 mV/dec, a small hysteresis of similar to 0.05 V, and a high breakdown voltage of 1084 V at 1 mu A/mm. Effective suppression of current collapse with a dynamic-to-static ON-resistance ratio of 1.78 at a drain bias of 600 V is also achieved in the device. Benefiting from the highly uniform gate stack, large-area devices with a gate width of 20 mm were also demonstrated using the ZrO2 gate dielectric, exhibiting a maximum output current of 7.4 A, a low ON-resistance of 0.66 Omega, and a high breakdown voltage of 650 V at an OFF-state drain current of 1 mu A/mm.
KeywordIII-nitride gate dielectric leakage metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) power ZrO2
DOI10.1109/TED.2018.2874075
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Physics, Applied
WOS IDWOS:000451255200011
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China;
2.Univ Macau, Inst Appl Phys & Mat Engn, Taipa, Macao, Peoples R China
Recommended Citation
GB/T 7714
Jiang, Huaxing,Liu, Chao,Ng, Kar Wei,et al. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65(12):5337-5342.
APA Jiang, Huaxing,Liu, Chao,Ng, Kar Wei,Tang, Chak Wah,&Lau, Kei May.(2018).High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric.IEEE TRANSACTIONS ON ELECTRON DEVICES,65(12),5337-5342.
MLA Jiang, Huaxing,et al."High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric".IEEE TRANSACTIONS ON ELECTRON DEVICES 65.12(2018):5337-5342.
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